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| 型号 | NDD04N60Z-1G |
| 厂商 | ON Semiconductor |
| 描述 | MOSFET N-CH 600V 4A IPAK |
| NDD04N60Z-1G PDF |  |
| 代理商 | NDD04N60Z-1G |
| 标准包装 | 75 |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 标准 |
| 漏极至源极电压(Vdss) | 600V |
| 电流 - 连续漏极(Id) @ 25° C | 4.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 2 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大） | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds | 640pF @ 25V |
| 功率 - 最大 | 83W |
| 安装类型 | 通孔 |
| 封装/外壳 | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装 | I-Pak |
| 包装 | 管件 |
| 其它名称 | NDD04N60Z-1G-ND NDD04N60Z-1GOS |
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